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| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 2.540 INCHES MAXIMUM" |
| ADAT | BODY WIDTH | 2.540 INCHES MAXIMUM" |
| ADAU | BODY HEIGHT | 0.103 INCHES MAXIMUM" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | F-16" |
| CBBL | FEATURES PROVIDED | BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMED AND TESTED TO MIL-STD-883" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | LEADED CHIP CARRIER" |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR" |
| CRTL | CRITICALITY CODE JUSTIFICATION | CBBL" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, ASIC, DIGITAL, SYMBOL GENERATOR" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 5.0 VOLTS MAXIMUM INPUT AND -0.5 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE" |
| CZER | MEMORY DEVICE TYPE | PAL" |
| FEAT | SPECIAL FEATURES | 112,000 GATE COUNT;TI TBG1000 0.8 MICRON BI-CMOS TECHNOLOGY;FOUR FUNCTIONS-BUS INTERFACE, SYMBOL GENERATOR, SYMBOL OCCLUSION AND SYMBOL SCAN CONVERSION FUNCTIONS;MAX CLOCK FREQUENCY IS 40 MHZ" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 196 BEAM LEAD" |
| ADAQ | BODY LENGTH | 2.540 INCHES MAXIMUM" |
| ADAT | BODY WIDTH | 2.540 INCHES MAXIMUM" |
| ADAU | BODY HEIGHT | 0.103 INCHES MAXIMUM" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | F-16" |
| CBBL | FEATURES PROVIDED | BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMED AND TESTED TO MIL-STD-883" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | LEADED CHIP CARRIER" |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR" |
| CRTL | CRITICALITY CODE JUSTIFICATION | CBBL" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, ASIC, DIGITAL, SYMBOL GENERATOR" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 5.0 VOLTS MAXIMUM INPUT AND -0.5 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE" |
| CZER | MEMORY DEVICE TYPE | PAL" |
| FEAT | SPECIAL FEATURES | 112,000 GATE COUNT;TI TBG1000 0.8 MICRON BI-CMOS TECHNOLOGY;FOUR FUNCTIONS-BUS INTERFACE, SYMBOL GENERATOR, SYMBOL OCCLUSION AND SYMBOL SCAN CONVERSION FUNCTIONS;MAX CLOCK FREQUENCY IS 40 MHZ" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 196 BEAM LEAD" |
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