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MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL OR GLASS" |
ABHP | OVERALL LENGTH | 0.560 INCHES MAXIMUM" |
ABKW | OVERALL HEIGHT | 0.255 INCHES MAXIMUM" |
ABMK | OVERALL WIDTH | 0.370 INCHES MAXIMUM" |
AFZC | FUNCTION FOR WHICH DESIGNED | BIDIRECTIONAL" |
ASKA | COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE" |
AXGY | MOUNTING METHOD | TERMINAL" |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR" |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.15 MAXIMUM FORWARD VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE" |
CTQX | CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES FORWARD CURRENT, AVERAGE BLANK ALL SEMICONDUCTOR DEVICE DIODE AND 90.00 AMPERES PEAK FORWARD SURGE CURRENT NANOAMPERES ALL SEMICONDUCTOR DEVICE DIODE AND 300.00 AMPERES SOURCE CUTOFF CURRENT UNIVERSAL ALL SEMICONDUCTOR DEVICE D" |
CTRD | POWER RATING PER CHARACTERISTIC | 2.5 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE" |
CTRG | CAPACITANCE RATING IN PICOFARADS | 95.0 MAXIMUM ALL SEMICONDUCTOR" |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION" |
FEAT | SPECIAL FEATURES | VARISTOR DIODE ASSY" |
TEST | TEST DATA DOCUMENT | 49956-G204968 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW" |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD" |
ABBH | INCLOSURE MATERIAL | METAL OR GLASS" |
ABHP | OVERALL LENGTH | 0.560 INCHES MAXIMUM" |
ABKW | OVERALL HEIGHT | 0.255 INCHES MAXIMUM" |
ABMK | OVERALL WIDTH | 0.370 INCHES MAXIMUM" |
AFZC | FUNCTION FOR WHICH DESIGNED | BIDIRECTIONAL" |
ASKA | COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE" |
AXGY | MOUNTING METHOD | TERMINAL" |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR" |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.15 MAXIMUM FORWARD VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE" |
CTQX | CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES FORWARD CURRENT, AVERAGE BLANK ALL SEMICONDUCTOR DEVICE DIODE AND 90.00 AMPERES PEAK FORWARD SURGE CURRENT NANOAMPERES ALL SEMICONDUCTOR DEVICE DIODE AND 300.00 AMPERES SOURCE CUTOFF CURRENT UNIVERSAL ALL SEMICONDUCTOR DEVICE D" |
CTRD | POWER RATING PER CHARACTERISTIC | 2.5 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE" |
CTRG | CAPACITANCE RATING IN PICOFARADS | 95.0 MAXIMUM ALL SEMICONDUCTOR" |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION" |
FEAT | SPECIAL FEATURES | VARISTOR DIODE ASSY" |
TEST | TEST DATA DOCUMENT | 49956-G204968 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW" |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD" |
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