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MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.810 INCHES MINIMUM AND 0.830 INCHES MAXIMUM" |
ADAT | BODY WIDTH | 0.404 INCHES MINIMUM AND 0.416 INCHES MAXIMUM" |
ADAU | BODY HEIGHT | 0.132 INCHES MAXIMUM" |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
CBBL | FEATURES PROVIDED | PROGRAMMABLE AND MONOLITHIC AND W/ENABLE AND W/DISABLE AND HIGH IMPEDANCE" |
CQSJ | INCLOSURE MATERIAL | CERAMIC" |
CQSZ | INCLOSURE CONFIGURATION | FLAT PACK" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CQZP | INPUT CIRCUIT PATTERN | 28 INPUT" |
CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MICROAMPERES REVERSE CURRENT, DC BLANK" |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | FLASH EEPROM" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE" |
CZEP | CAPITANCE RATING PER CHARACTERISTIC | 10.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM" |
CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM ACCESS" |
CZER | MEMORY DEVICE TYPE | EEPROM" |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS" |
ADAQ | BODY LENGTH | 0.810 INCHES MINIMUM AND 0.830 INCHES MAXIMUM" |
ADAT | BODY WIDTH | 0.404 INCHES MINIMUM AND 0.416 INCHES MAXIMUM" |
ADAU | BODY HEIGHT | 0.132 INCHES MAXIMUM" |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
CBBL | FEATURES PROVIDED | PROGRAMMABLE AND MONOLITHIC AND W/ENABLE AND W/DISABLE AND HIGH IMPEDANCE" |
CQSJ | INCLOSURE MATERIAL | CERAMIC" |
CQSZ | INCLOSURE CONFIGURATION | FLAT PACK" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CQZP | INPUT CIRCUIT PATTERN | 28 INPUT" |
CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MICROAMPERES REVERSE CURRENT, DC BLANK" |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | FLASH EEPROM" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE" |
CZEP | CAPITANCE RATING PER CHARACTERISTIC | 10.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM" |
CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM ACCESS" |
CZER | MEMORY DEVICE TYPE | EEPROM" |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS" |
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