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Get a Competitive Quote for Part CY7C429-30DMB by E2v Inc (NSN 5962-01-365-5109)

Part Number:  CY7C429-30DMB
Alternate P/N:  CY7C42930DMB
Manufacturer:  e2v inc
NIIN:  13655109
Item Name :  microcircuit memory
CAGE Code:  0C7V7
FSG:  59 Electrical and Electronic Equipment Components
INC Code:  41015
Country:  USA
NCB Code:  01

Thank you for choosing PurchasingEfficiency.com to source Part Number CY7C429-30DMB with an NSN 5962-01-365-5109. Purchasing Efficiency is a leading website for purchasing long lead-time, hard to find, and obsolete parts, as well as new and used parts.

Please complete the RFQ form for part number CY7C429-30DMB with 0C7V7 and a dedicated product expert will be in touch with you within 15 minutes to discuss your quote for part number CY7C429-30DMB, NSN 5962-01-365-5109, and manufactured by E2v Inc.

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Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/customer-terms-and-conditions/ . All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without Aircraft Model 6RE77 is void.

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NSN Information for Part Number CY7C429-30DMB with NSN 5962-01-365-5109, 5962013655109

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-365-5109

Item Description:

Microcircuitmemory

59620136551090ND
CIICHCCESDPMICCriticalityENAC
UDA0
Part NumberISCRNVCRNCCHCCMSDSSADC
Idt7203s30tdb515

Characteristics Data of NSN 5962-01-365-5109, 5962013655109

MRCCriteriaCharacteristic
AFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITDIGITALCMOS2K X 9 FIRST-IN FIRST-OUTMONOLITHIC SILCON
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT
ADAQBODY LENGTH1 430 INCHES MINIMUM AND 1 485 INCHES MAXIMUM
ADATBODY WIDTH0 245 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING1 0 WATTS
AFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZEQTIME RATING PER CHACTERISTIC30 00 NANOSECONDS AF OUTPUT MEGAWATTS
CZERMEMORY DEVICE TYPEFIRST-IN FIRST-OUT
CZESHYBRID TECHNOLOGY TYPEMONOLITHIC
TESTTEST DATA DOCUMENT67268-5962-88669 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
ZZZKSPECIFICATIONSTANDARD DATA96906-MIL-STD-883 GOVERNMENT STANDARD
ADAUBODY HEIGHT0 155 INCHES MINIMUM AND 0 200 INCHES MAXIMUM
AGAVEND ITEM IDENTIFICATION1430010876330 EI FSCM 18876
CTQXCURRENT RATING PER CHARACTERISTIC20 00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM APPLIED AND 7 0 VOLTS MAXIMUM APPLIED

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