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MRC | Criteria | Characteristic |
---|---|---|
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | LOW POWER AND MONOLITHIC |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 25.00 NANOSECONDS AF OUTPUT MEGAWATTS |
CZER | MEMORY DEVICE TYPE | RAM |
CZZZ | MEMORY CAPACITY | 256K X 4 |
FEAT | SPECIAL FEATURES | SRAM MEMORY ARRAY |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
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