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| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC" |
| CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | 128K X 8 STANDARD POWER CMOS SPRAM DUAL CE" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE" |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS NOMINAL ACCESS" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 LEADLESS" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC" |
| CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | 128K X 8 STANDARD POWER CMOS SPRAM DUAL CE" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE" |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS NOMINAL ACCESS" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 LEADLESS" |
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